DDR5 ECC U-DIMM
- High-Speed Industrial-Grade Dram Module of the New Generation
- ES level and Industrial-Grade IC
- Power Management ICs (PMICs) Equipped.
- JEDEC Low Power 1.1V Standards
- On-Die ECC for Stable System
- Military-Grade Resistance to Shocks and Vibrations
- ROHS/CE/FCC Standards
- DFE function provides better protection for server systems
- Patented IC Grade Verification Technology (NO.: I751093)
Patented IC Grade Verification Technology
Exclusive IC grade verification technology is adopted in the series for effective IC frequency and temperature grading to ensure compatibility and durability in industrial applications on various equipment. Taiwan Invention Patent (NO.: I751093)
High-Speed Industrial Memory of the Next Generation
In the industrial DDR5 series, the fundamental frequency is drastically upgraded to 4800MHz . The industrial DDR5 series can be applied to 5G communications, edge computing, the Internet of Vehicles, servers, AI, industrial computers with embedded systems, and other industries.
ES level and Industrial-Grade IC
High-quality ES level IC is selected for the product series to ensure durability and reliability under industrial environments.
Power Management ICs (PMICs) Design for Effective Load Control
The power management functions have been transferred from the motherboard to the DRAM modules for effective load management, increased reliability and performance of the DRAM modules, optimized signals, and minimal interference.
JEDEC Low Power 1.1V Standards
The DDR5 series requires a working voltage of only 1.1V, effectively reducing power consumption and heat production, making it great for low-power industrial systems.
On-die ECC for Stable System
Supports on-die ECCs, a feature that self-corrects DRAM cells for stability and reliability in systems.
DFE function provides better protection for server systems
TEAMGROUP DDR5 Server DIMM added DFE (Decision Feedback Equalization) support, greatly enhancing the security of the DDR5 memory modules. In terms of PCB design, resistors were removed and replaced with DFE, reducing abnormalities related to resistors, such as damage, resistor value errors, sulfuration, and other phenomena that result in quality issues. This allows industrial storage solutions to be upgraded while providing better protection for server systems.
Non-operation: 1,500G / 0.5ms (compliant with MIL-STD-883K Test condition B)
Non-operation: 4.02 Grms, 15 ~ 2,000 Hz / sine (compliant with MIL-STD-810G General)
We reserve the right to modify product specifications without prior notice.
Frequency | Capacity | COMPONENT COMPOSITION |
RANK | Team P/N |
---|---|---|---|---|
4800 | 16GB | 2Gx8 | 1RX8 | TE16GFLEV1MH |
4800 | 32GB | 2Gx8 | 2RX8 | TE32GFLEV1MH |
5600 | 16GB | 2Gx8 | 1RX8 | TE16GFLEV2MH |
5600 | 32GB | 2Gx8 | 2RX8 | TE32GFLEV2MH |
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