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DDR5 ECC CSO-DIMM
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6400 / 7200
- High-Speed Industrial-Grade CKD-6400/7200 DRAM Module of the Next Generation
- Durable Sulfur-Resistant Storage Product (Taiwan Utility Model Patent: M611951)
- Power Management ICs (PMICs) Equipped
- JEDEC Low Power 1.1V Standards
- ON-Die ECC for Stable System
- Military-Grade Resistance to Shocks and Vibrations
- ES level and Industrial-Grade IC
- ROHS/CE/FCC Standards
Patented IC Grade Verification Technology
Exclusive IC grade verification technology is adopted in the series for effective IC frequency and temperature grading to ensure compatibility and durability in industrial applications on various equipment. Taiwan Invention Patent (NO.: I751093)
High-Speed Industrial CKD-6400/7200 Memory of the Next Generation
The industrial DDR5 series can be applied industries , the fundamental frequency is drastically upgraded to 6400/7200 MHz . Through the CKD chip, the overall performance and stability could be leveled up.
Durable Sulfur-Resistant Storage Product (Taiwan Utility Model Patent: M611951) The series is equipped with technologies for durable DRAM storage and complemented with sulfur-resistant pressure-resistant passive components and printed circuit boards for increased service life and compatibility with outdoor applications common in the new generation of industrial products.
ES level and Industrial-Grade IC
High-quality ES level IC is selected for the product series to ensure durability and reliability under industrial environments.
Power Management ICs (PMICs) Design for Effective Load Control
The power management functions have been transferred from the motherboard to the DRAM modules for effective load management, increased reliability and performance of the DRAM modules, optimized signals, and minimal interference.
JEDEC Low Power 1.1V Standards
The DDR5 series requires a working voltage of only 1.1V, effectively reducing power consumption and heat production, making it great for low-power industrial systems.
On-die ECC for Stable System
Supports on-die ECCs, a feature that self-corrects DRAM cells for stability and reliability in systems.
Frequency
6400 / 7200
Capacity
8GB / 16GB / 24GB / 32GB / 48GB / 64GB
Pin Count
262 pin
Width
72 Bits
Voltage
1.1V
PCB Height
1.18 Inches
Standard Operating Temperature
0°C(+32°F) ~ +95°C(+203°F)(Tc)
Extended Operating Temperature
-40°C(-40°F) ~ +95°C(+203°F)(Tc)
Shock
Operation: 50G/11ms (compliant with MIL-STD-202G Test condition A )
Non-operation: 1500G/0.5ms (compliant with MIL-STD-883K Test condition B)
Non-operation: 1500G/0.5ms (compliant with MIL-STD-883K Test condition B)
Vibration
Operation: 7.69 Grms, 20~2000 Hz/random (compliant with MIL-STD-810G General)
Non-operation: 4.02 Grms, 15 ~ 2000 Hz/sine (compliant with MIL-STD-810G General)
Non-operation: 4.02 Grms, 15 ~ 2000 Hz/sine (compliant with MIL-STD-810G General)
Anti-Sulfuration
Optional
Gold Finger
-
Value-Added Service
Conformal Coating / Graphene Heatsink
Warranty
Limited Lifetime
NOTES：
We reserve the right to modify product specifications without prior notice.
We reserve the right to modify product specifications without prior notice.
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